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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB668 DESCRIPTION With TO-220C package High DC current gain DARLINGTON APPLICATIONS For use in power amplifier and switching applications PINNING PIN 1 2 3 Base Collector; connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER HAN INC Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector-base voltage SEM GE Open emitter OND IC CONDITIONS TOR UC VALUE -100 -100 -5 -3 -5 UNIT V V V A A W ae ae Open base Open collector Collector power dissipation Junction temperature Storage temperature TC=25ae 25 150 -55~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SB668 SYMBOL MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA, IB=0 -100 V V(BR)CBO Collector-base breakdown voltage IC=-1mA, IE=0 -100 V V(BR)EBO Emitter-base breakdown voltage IE=-2mA, IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-2A ,IB=-8mA -2.0 V VBEsat Base-emitter saturation voltage IC=-2A ,IB=-8mA -2.5 V ICBO Collector cut-off current VCB=-120V, IE=0 -100 |I A ICEO Collector cut-off current IEBO Emitter cut-off current ANG CH VCE=-100V, IB=0 VEB=-5V, IC=0 hFE DC current gain IN SEM E IC=-1A ; VCE=-3V OND IC TOR UC -2 -500 |I A mA 2000 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB668 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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